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A wideband PVDF-on-silicon ultrasonic transducer array with microspheres embedded low melting temperature alloy backing

机译:具有微球嵌入低熔点合金背衬的宽带PVDF硅基超声换能器阵列

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摘要

A PVDF-based 8-element ultrasound transducer array (1 mm x 1 mm element size with an inter-element spacing of 1 mm) on a silicon carrier substrate is fabricated and characterized. To improve the performance of the transducer, new CMOS-compatible fabrication technologies are introduced. These include: (1) adhesive micro-contact printing on non-radiating areas, and (2) glass microspheres (7-20 mu m in diameter) embedded low melting temperature alloy (LMA) for backside electrical connection. The first improvement removes the adverse effects of adhesive layer (e.g., lower sensitivity) between the PVDF and backside contact while the second one improves the pulse-echo signal quality by eliminating reflections at the backing/water interface. The fabricated array elements are tested in a water tank and their pulse-echo response are recorded. The central frequency of each element is 25 MHz with a 100% measured 6-dB bandwidth (60% 3-dB bandwidth).
机译:在硅载体衬底上制造并表征了基于PVDF的8元素超声换能器阵列(元素尺寸为1 mm x 1 mm,元素间间距为1 mm)。为了提高换能器的性能,引入了新的CMOS兼容制造技术。其中包括:(1)在非辐射区域上进行粘合剂微接触印刷,以及(2)嵌入了用于背面电连接的低熔点合金(LMA)的玻璃微球(直径7-20微米)。第一个改进消除了PVDF和背面接触之间的粘合剂层的不利影响(例如,较低的灵敏度),而第二个改进则是通过消除在背衬/水界面处的反射来改善脉冲回波信号的质量。所制造的阵列元件在水箱中进行测试,并记录其脉冲回波响应。每个元件的中心频率为25 MHz,测得的100%6 dB带宽(60%3 dB带宽)。

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